FDP6035L mosfet equivalent, n-channel mosfet.
58 A, 30 V. RDS(ON) = 0.011 Ω @ VGS=10 V RDS(ON) = 0.019 Ω @ VGS=4.5 V. Low gate charge (typical 34 nC). Low Crss (typical 175 pF). Fast switching speed.
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such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resist.
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These d.
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